Datasheet

Electrical characteristics STM32F051x
44/105 Doc ID 022265 Rev 3
6.3.2 Operating conditions at power-up / power-down
The parameters given in Ta ble 2 1 are derived from tests performed under the ambient
temperature condition summarized in Table 2 0.
6.3.3 Embedded reset and power control block characteristics
The parameters given in Ta ble 2 2 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 2 0 .
Table 21. Operating conditions at power-up / power-down
Symbol Parameter Conditions Min Max Unit
t
VDD
V
DD
rise time rate 0
∞
µs/V
V
DD
fall time rate 20
∞
t
VDDA
V
DDA
rise time rate 0
∞
V
DDA
fall time rate 20
∞
Table 22. Embedded reset and power control block characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
POR/PDR
(1)
1. The PDR detector monitors V
DD
and also V
DDA
(if kept enabled in the option bytes). The POR detector
monitors only V
DD
.
Power on/power down
reset threshold
Falling edge
1.8
(2)
2. The product behavior is guaranteed by design down to the minimum V
POR/PDR
value.
1.88 1.96 V
Rising edge 1.84 1.92 2.0 V
V
PDRhyst
(1)
PDR hysteresis - 40 - mV
t
RSTTEMPO
(3)
3. Guaranteed by design, not tested in production.
Reset temporization 1.5 2.5 4.5 ms
Table 23. Programmable voltage detector characteristics
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Unit
V
PVD0
PVD threshold 0
Rising edge 2.1 2.18 2.26 V
Falling edge 2 2.08 2.16 V
V
PVD1
PVD threshold 1
Rising edge 2.19 2.28 2.37 V
Falling edge 2.09 2.18 2.27 V
V
PVD2
PVD threshold 2
Rising edge 2.28 2.38 2.48 V
Falling edge 2.18 2.28 2.38 V
V
PVD3
PVD threshold 3
Rising edge 2.38 2.48 2.58 V
Falling edge 2.28 2.38 2.48 V
V
PVD4
PVD threshold 4
Rising edge 2.47 2.58 2.69 V
Falling edge 2.37 2.48 2.59 V