Datasheet
DocID024710 Rev 2 7/24
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage
vs. temperature
Figure 12. Normalized on-resistance vs
temperature
Figure 13. Source-drain diode forward
characteristics
V
GS
6
4
2
0
0
Q
g
(nC)
(V)
2
8
10
V
DD
=480V
300
200
100
0
400
V
DS
4
500
V
DS
(V)
I
D
=7.5A
6
8
10
12
12
AM15825v1
R
DS(on)
0.56
0.55
0.54
0.53
2
I
D
(A)
(Ω)
1
3
0.57
4
5
V
GS
=10V
0.58
6
7
AM15826v1
C
10
1
0.1
0.1
10
V
DS
(V)
(pF)
1
100
Ciss
Coss
Crss
100
1000
AM15827v1
V
GS(th)
0.8
0.7
T
J
(°C)
(norm)
-50
0.9
-25
50
100
0
25
75
125
1.0
1.1
ID=250 µA
AM15828v1
R
DS(on)
1.3
1.1
0.9
0.7
T
J
(°C)
(norm)
0.5
-50
-25
0
25
I
D
=3 A
50
75
100
125
1.5
1.7
1.9
2.1
2.3
2.5
AM15829v1
V
SD
0
2
I
SD
(A)
(V)
1
5
3
4
0
0.2
0.4
0.6
T
J
=-50°C
T
J
=150°C
T
J
=25°C
0.8
6
7
1
1.2
1.4
AM15830v1