Datasheet

DocID024735 Rev 2 3/21
STB18N60M2, STP18N60M2, STW18N60M2 Electrical ratings
21
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 13 A
I
D
Drain current (continuous) at T
C
= 100 °C 8 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 52 A
P
TOT
Total dissipation at T
C
= 25 °C 110 W
dv/dt
(2)
2. I
SD
≤ 13 A, di/dt ≤ 400 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
=400 V.
Peak diode recovery voltage slope 15 V/ns
dv/dt
(3)
3. V
DS
≤ 480 V
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature
- 55 to 150 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter
Value
Unit
D
2
PAK TO-220 TO-247
R
thj-case
Thermal resistance junction-case max 1.14 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
R
thj-pcb
(1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Thermal resistance junction-pcb max 30 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
)
3A
E
AS
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
=50)
135 mJ