Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTP6N60M2, MOSFET

This is information on a product in full production.

June 2013 DocID024771 Rev 1 1/18

STF6N60M2, STP6N60M2,

STU6N60M2

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Q

Power MOSFET in TO-220FP, TO-220 and IPAK packages

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q

. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

TO-220

TO-220FP

IPAK

TAB

AM15572v1

, TAB

Order codes

Jmax

DS(on)

max

STF6N60M2

650 V 1.2 Ω 4.5 ASTP6N60M2

STU6N60M2

Table 1. Device summary

Order codes Marking Package Packaging

STF6N60M2

6N60M2

TO-220FP

TubeSTP6N60M2 TO-220

STU6N60M2 IPAK

www.st.com

Summary of content (18 pages)

PAGE 1
STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB 3 Order codes 2 1 1 2 IPAK 3 TO-220FP VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A STF6N60M2 STP6N60M2 TAB STU6N60M2 • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 1 2 • Low gate input resistance TO-220 • 100% avalanche tested Figure 1.
PAGE 2
Contents STF6N60M2, STP6N60M2, STU6N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
STF6N60M2, STP6N60M2, STU6N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP VGS Gate-source voltage TO-220, IPAK ± 25 V (1) 4.5 A ID Drain current (continuous) at TC = 25 °C 4.5 ID Drain current (continuous) at TC = 100 °C 2.9(1) 2.
PAGE 4
Electrical characteristics 2 STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ.
PAGE 5
STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 4.5 A ISDM (1) Source-drain current (pulsed) - 18 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 4.5 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 4.
PAGE 6
Electrical characteristics 2.1 STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP AM15886v1 ID (A) Op Lim era ite tion d by in t m his ax ar RD ea S( is on 10 ) 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220 Figure 5.
PAGE 7
STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM15876v1 ID (A) 8 VGS= 8, 9, 10 V VGS= 7 V 7 AM15877v1 ID (A) 8 VDS= 20 V 7 6 6 VGS= 6 V 5 5 4 4 3 3 VGS= 5 V 2 2 1 1 VGS= 4 V 0 5 0 10 15 0 20 VDS(V) 0 Figure 10. Gate charge vs gate-source voltage AM15878v1 VDS VGS (V) 12 (V) VDD=480V ID=4.5V VDS 10 4 2 6 10 VGS(V) 8 Figure 11.
PAGE 8
Electrical characteristics STF6N60M2, STP6N60M2, STU6N60M2 Figure 14. Normalized gate threshold voltage vs temperature AM15882v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM15883v1 RDS(on) (norm) 2.3 1.1 ID=250 µA ID=2.2 A 2.1 1.9 1.0 1.7 1.5 0.9 1.3 1.1 0.8 0.9 0.7 -50 -25 0.7 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Source-drain diode forward characteristics AM15884v1 VSD (V) 1.4 1.2 TJ=-50°C 1 0.8 0.6 TJ=150°C TJ=25°C 0.4 0.
PAGE 9
STF6N60M2, STP6N60M2, STU6N60M2 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G D.U.T.
PAGE 10
Package mechanical data 4 STF6N60M2, STP6N60M2, STU6N60M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PAGE 11
STF6N60M2, STP6N60M2, STU6N60M2 Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.
PAGE 12
Package mechanical data STF6N60M2, STP6N60M2, STU6N60M2 Figure 23.
PAGE 13
STF6N60M2, STP6N60M2, STU6N60M2 Package mechanical data Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.
PAGE 14
Package mechanical data STF6N60M2, STP6N60M2, STU6N60M2 Figure 24.
PAGE 15
STF6N60M2, STP6N60M2, STU6N60M2 Package mechanical data Table 11. IPAK (TO-251) mechanical data mm. DIM min. typ. max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID024771 Rev 1 1.
PAGE 16
Package mechanical data STF6N60M2, STP6N60M2, STU6N60M2 Figure 25.
PAGE 17
STF6N60M2, STP6N60M2, STU6N60M2 5 Revision history Revision history Table 12. Document revision history Date Revision 11-Jun-2013 1 Changes First release.
PAGE 18
STF6N60M2, STP6N60M2, STU6N60M2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.