Datasheet

DocID024771 Rev 1 7/18
STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics
18
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
Figure 12. Capacitance variations Figure 13. Normalized V
DS
vs temperature
I D
3
2
1
0
0
10
V
DS (V)
(A)
5
4
V
GS
= 4 V
V
GS
= 5 V
V
GS
= 8, 9, 10 V
5
V
GS
= 6 V
V
GS
= 7 V
6
8
15
20
7
AM15876v1
I D
3
2
1
0
0
2
V
GS (V)
4
(A)
4
6
V
DS
= 20 V
8
5
6
7
10
8
AM15877v1
V GS
6
4
2
0
0
2
Q
g (nC)
(V)
8
4
6
10
V DD =480V
8
12
I
D =4.5V
V
DS
300
200
100
0
400
500
V
DS
(V)
AM15878v1
R DS(on)
1.060
1.040
1.020
0
3
I
D (A)
(Ω)
1
1.080
1.100
2
4
V GS =10V
1.120
AM15879v1
C
100
10
1
0.1
0.1
10
V
DS (V)
(pF)
1
100
Ciss
Coss
Crss
1000
AM15880v1
V DS
-50
T
J (°C)
(norm)
-25
50
0
25
75
0.93
0.95
0.97
1.03
1.05
1.07
100
0.99
1.01
1.09
1.11
I =1 mA
D
AM15881v1