Datasheet
Electrical characteristics STF6N60M2, STP6N60M2, STU6N60M2
8/18 DocID024771 Rev 1
Figure 14. Normalized gate threshold voltage vs
temperature
Figure 15. Normalized on-resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
V
GS(th)
0.8
0.7
-50
T
J
(°C)
(norm)
-25
0.9
50
0
25
75
100
I
D
=250 µA
1.1
1.0
AM15882v1
R
DS(on)
0.9
0.7
0.5
-25
T
J
(°C)
-50
0
1.1
I
D
=2.2 A
25
50
75
1.3
(norm)
100
1.5
1.7
1.9
2.1
2.3
AM15883v1
V
SD
0
2
I
SD
(A)
(V)
1
3
0
0.2
0.4
0.6
0.8
T
J
=-50°C
T
J
=150°C
T
J
=25°C
4
1.2
1
1.4
AM15884v1