Datasheet

STP80NF10 - STB80NF10
2/11
Table 3: Absolute Maximum ratings
(●) Pulse width limited by safe operating area
(*) Limited by Package
(1) I
SD
≤80A, di/dt ≤300A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX.
(2) Starting T
j
= 25°C, I
D
= 80A, V
DD
= 50V
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100 V
V
DGR
Drain-gate Voltage (R
GS
= 20 kΩ)
100 V
V
GS
Gate- source Voltage ±20 V
I
D
Drain Current (continuous) at T
C
= 25°C
80 A
I
D
Drain Current (continuous) at T
C
= 100°C
80 (*) A
I
DM
( )
Drain Current (pulsed) 320 A
P
TOT
Total Dissipation at T
C
= 25°C
300 W
Derating Factor 2 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 200 mJ
T
stg
Storage Temperature –55 to 175 °C
T
j
Operating Junction Temperature 175 °C
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0 100 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, T
C
= 125°C
10 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
234V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 40 A 0.012 0.015 Ω