Datasheet

3/11
STP80NF10 - STB80NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
Table 9: Switching Off
Table 10: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
= 15V
,
I
D
= 40A 50 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0 5500
700
175
pF
pF
pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50V, I
D
= 40A
R
G
=4.7Ω V
GS
= 10V
(see Figure 14)
26
80
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80V, I
D
= 80A,
V
GS
= 10V
135
23
51.3
182 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 50V, I
D
= 40A,
R
G
=4.7Ω, V
GS
= 10V
(see Figure 14)
116
60
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 80 A
I
SDM
(2)
Source-drain Current (pulsed) 320 A
V
SD
(1)
Forward On Voltage
I
SD
= 80A, V
GS
= 0
1.3 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80A, di/dt = 100A/µs,
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
106
0.45
8.5
ns
µC
A