Datasheet

Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low frequency
switching applications.
• High DC Current Gain —
Min h
FE
= 1000 @ I
C
= 5 A, V
CE
= 4 V
• Collector–Emitter Sustaining Voltage — @ 30 mA
V
CEO(sus)
= 60 Vdc (Min) — TIP140, TIP145
80 Vdc (Min) — TIP141, TIP146
100 Vdc (Min) — TIP142, TIP147
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
MAXIMUM RATINGS
Rating Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
Collector–Emitter Voltage V
CEO
60 80 100 Vdc
Collector–Base Voltage V
CB
60 80 100 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current — Continuous
Peak (1)
I
C
10
15
Adc
Base Current — Continuous I
B
0.5 Adc
Total Device Dissipation
@ T
C
= 25C
P
D
125 Watts
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θ
JC
1.0 C/W
Thermal Resistance, Case to Ambient R
θ
JA
35.7 C/W
(1) 5 ms,  10% Duty Cycle.
DARLINGTON SCHEMATICS
BASE
EMITTER
COLLECTOR
≈ 8.0 k ≈ 40
BASE
EMITTER
COLLECTOR
≈ 8.0 k ≈ 40
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
 Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 4
1 Publication Order Number:
TIP140/D
TIP140
TIP141
TIP142
TIP145
TIP146
TIP147
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60–100 VOLTS
125 WATTS
*ON Semiconductor Preferred Device
*
NPN
PNP
*
*
*
CASE 340D–02