Datasheet

TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I
C
= 30 mA, I
B
= 0) TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
V
CEO(sus)
60
80
100
—
—
—
—
—
—
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0) TIP140, TIP145
(V
CE
= 40 Vdc, I
B
= 0) TIP141, TIP146
(V
CE
= 50 Vdc, I
B
= 0) TIP142, TIP147
I
CEO
—
—
—
—
—
—
2.0
2.0
2.0
mA
Collector Cutoff Current
(V
CB
= 60 V, I
E
= 0) TIP140, TIP145
(V
CB
= 80 V, I
E
= 0) TIP141, TIP146
(V
CB
= 100 V, I
E
= 0) TIP142, TIP147
I
CBO
—
—
—
—
—
—
1.0
1.0
1.0
mA
Emitter Cutoff Current (V
BE
= 5.0 V) I
EBO
— — 2 0 mA
ON CHARACTERISTICS (1)
DC Current Gain
(I
C
= 5.0 A, V
CE
= 4.0 V)
(I
C
= 10 A, V
CE
= 4.0 V)
h
FE
1000
500
—
—
—
—
—
Collector–Emitter Saturation Voltage
(I
C
= 5.0 A, I
B
= 10 mA)
(I
C
= 10 A, I
B
= 40 mA)
V
CE(sat)
—
—
—
—
2.0
3.0
Vdc
Base–Emitter Saturation Voltage
(I
C
= 10 A, I
B
= 40 mA)
V
BE(sat)
— — 3.5 Vdc
Base–Emitter On Voltage
(I
C
= 10 A, V
CE
= 4.0 Vdc)
V
BE(on)
— — 3.0 Vdc
SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time t
d
— 0.15 — µs
Rise Time
(V
CC
= 30 V, I
C
= 5.0 A,
I
B
= 20 mA Duty Cycle  20%
t
r
— 0.55 — µs
Storage Time
I
B
= 20 mA, Duty Cycle  2.0%,
I
B1
= I
B2
, R
C
& R
B
Varied, T
J
= 25C)
t
s
— 2.5 — µs
Fall Time
I
B1
I
B2
,
R
C
&
R
B
Varied,
T
J
25 C)
t
f
— 2.5 — µs
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle  2.0%.
Figure 1. Switching Times Test Circuit
10
0.2
Figure 2. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)µ
5.0
2.0
0.5
0.1
0.5 1.0 3.0 5.0 10 20
0.2
PNP
NPN
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0
V
2
approx
+12 V
V
1
appox.
-8.0 V
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1.0%
25 µs
0
R
B
51
D
1
+4.0 V
V
CC
-30 V
R
C
TUT
≈ 8.0 k
≈ 40
SCOPE
for t
d
and t
r
, D1 is disconnected
and V
2
= 0
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
For NPN test circuit reverse diode and voltage polarities.
1.0