Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsThyristors & TriacsThyristor (SCR) TO 220AB 1000 V

TXN/TYN 0512 --->

TXN/TYN 1012

April 1995

SCR

Symbol Parameter Value Unit

T(RMS)

RMS on-state current

(180° conduction angle)

TXN

TYN

Tc=80°C

Tc=90°C

12 A

T(AV)

Average on-state current

(180° conduction angle,single phase circuit)

TXN

TYN

Tc=80°C

Tc=90°C

TSM

Non repetitive surge peak on-state current

( Tj initial = 25°C)

tp=8.3 ms 125 A

tp=10 ms 120

t value tp=10 ms 72 A

dI/dt Critical rate of rise of on-state current

Gate supply : I

= 100 mA di

/dt = 1 A/µs

100 A/µs

Tstg

Storage and operating junction temperature range - 40 to + 150

- 40 to + 125

°C

Tl Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260 °C

TO220AB

(Plastic)

.HIGH SURGE CAPABILITY

.HIGH ON-STATE CURRENT

.HIGH STABILITY AND RELIABILITY

.TXN Serie :

INSULATED VOLTAGE = 2500V

(RMS)

(UL RECOGNIZED : E81734)

DESCRIPTION

Symbol Parameter TYN/TXN Unit

0512 112 212 412 612 812 1012

DRM

RRM

Repetitive peak off-state voltage

Tj = 125 °C

50 100 200 400 600 800 1000 V

ABSOLUTE RATINGS (limiting values)

FEATURES

The TYN/TXN 0512 ---> TYN/TXN 1012 Family

of Silicon Controlled Rectifiers uses a high per-

formance glass passivated technology.

This general purpose Family of Silicon Controlled

Rectifiers is designed for power supplies up to

400Hz on resistive or inductive load.

1/5

Summary of content (5 pages)

PAGE 1
TXN/TYN 0512 ---> TXN/TYN 1012 SCR .. .. FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY TXN Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 0512 ---> TYN/TXN 1012 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load.
PAGE 2
TXN/TYN 0512 ---> TXN/TYN 1012 THERMAL RESISTANCES Symbol Rth (j-a) Parameter Value Unit 60 °C/W TXN 3.5 °C/W TYN 2.5 Junction to ambient Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol Value Unit IGT VD =12V (DC) R L=33Ω Tj=25°C MAX 15 mA VGT VD =12V (DC) R L=33Ω Tj=25°C MAX 1.5 V VGD VD =VDRM RL=3.3kΩ Tj= 125°C MIN 0.
PAGE 3
TXN/TYN 0512 ---> TXN/TYN 1012 Fig.1 : Maximum average power dissipation versus average on-state current (TXN). Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (TXN). Fig.3 : Maximum average power dissipation versus average on-state current (TYN). Fig.
PAGE 4
TXN/TYN 0512 ---> TXN/TYN 1012 Fig.7 : Relative variation of thermal impedance versus pulse duration. Fig.8 : Relative variation of gate trigger current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.9 : Non repetitive surge peak on-state current versus number of cycles. Fig.11 : On-state characteristics (maximum values). 4/5 Fig.
PAGE 5
TXN/TYN 0512 ---> TXN/TYN 1012 PACKAGE MECHANICAL DATA TO220AB Plastic REF. A H G I J D B F O P L C M =N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.