Datasheet

Z04 Series
2/6
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol Test Conditions Quadrant Z04xx
Unit
02 05 09 10
I
GT
(1)
V
D
= 12 V R
L
= 30 Ω
ALL MAX. 3 5 10 25
mA
V
GT
ALL MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ Tj = 125°C
ALL MIN. 0.2
V
I
H
(2)
I
T
= 50 mA
MAX. 3 5 10 25 mA
I
L
I
G
= 1.2 I
GT
I - III - IV MAX. 6 10 15 25 mA
II 12 15 25 50
dV/dt (2) V
D
= 67 %V
DRM
gate open Tj = 110°C
MIN. 10 20 100 200 V/µs
(dV/dt)c (2) (dI/dt)c = 1.8 A/ms
Tj = 110°C MIN. 0.5 1 2 5 V/µs
Symbol Test Conditions Value Unit
V
TM
(2) I
TM
= 5.5 A tp = 380 µs
Tj = 25°C MAX. 2.0 V
V
to
(2)
Threshold voltage Tj = 125°C MAX. 0.95 V
R
d
(2)
Dynamic resistance Tj = 125°C MAX. 180 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25°C
MAX.
5µA
Tj = 125°C 0.5 mA
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead (AC)
15
°C/W
R
th(j-a)
Junction to ambient 100 °C/W