Specifications
512MB Unbuffered DIMM     DDR SDRAM 
 Products and Specifications discussed herein are subject to change without notice © 2006 Super Talent Tech., Corporation. 
   8 
8.0 DC Operating Conditions 
Recommended operating conditions (Voltage referenced to Vss=0V, TA=0 to 70°C) 
Symbol  Parameter  Min  Max  Unit  Note
V
DD
  Supply voltage (nominal Vdd 2.5V for DDR333)  2.3  2.7  V   
V
DD
  Supply voltage ( nominal VDD 2.6V for DDR400)  2.5  2.7  V   
V
DDQ
  Supply voltage (nominal Vdd 2.5V for DDR333)  2.3  2.7  V   
V
DDQ
  Supply voltage ( nominal VDD 2.6V for DDR400)  2.5  2.7  V   
V
REF
 I/O Reference voltage  0.49*V
DDQ
 0.51*V
DDQ
 V   
V
TT
  I/O Termination voltage (system)  V
REF
-0.04 V
REF
+0.04 V   
V
IH
(DC)  Input logic high voltage  V
REF
+0.15 V
DDQ
+0.3 V   
V
IL
(DC)  Input logic low voltage  -0.3  V
REF
-0.15 V   
V
IN
(DC)  Input voltage level, CK and CK inputs  -0.3  V
DDQ
+0.3 V   
V
ID
(DC)  Input differential voltage, CK and CK inputs  0.36  V
DDQ
+0.6 V   
V
I
(Ratio)  V-I Matching: Pullup to Pulldown Current Ration  0.71  1.4  -   
I
IN
  Input leake current  -2  2  µA   
I
OZ
  Output leakage current  -5  5  µA   
I
OH
  Output high current (Normal strengh driver); V
OUT
 = V
TT
 + 0.84V  -16.8    mA   
I
OL
  Output high current (Normal strengh driver); V
OUT
 = V
TT
 - 0.84V  16.8    mA   
I
OH
  Output high current (Half strengh driver); V
OUT
 = V
TT
 + 0.45V  -9    mA   
I
OL
  Output high current (Half strengh driver); V
OUT
 = V
TT
 - 0.45V  9    mA   
9.0 AC Operating Conditions 
Symbol  Parameter/Condition  Min  Max  Unit  Note 
V
IH
(AC)  Input High (Logic 1) Voltage, DQ, DQS and DM signals  V
REF
+0.31 V  
V
IL
(AC)  Input Low (Logic 0) Voltage, DQ, DQS and DM signals    V
REF
+0.31 V   
V
ID
(AC)  Input voltage level, CK and CK inputs  0.7  V
DDQ
+0.6 V   
V
IX
(AC)  Input crossing point voltage, CK and CK inputs  0.5*V
DDQ
-0.2 0.5*V
DDQ
-0.2 V   
10. Input/Output Capacitance V
DD
=2.5V, V
DDQ
=2.5V, T
A
=25°C, f=1MHZ 
D32PA512N 
Symbol  Parameter/Condition 
Min  Max  Min Max
Unit
C
IN1
  Input capacitance (A0~A12, BA0~BA1, RAS, CAS, WE)  49  57  51  60  pF 
C
IN2
  Input capacitance (CKE0)  42  50  44  53  pF 
C
IN3
  Input capacitance (CS0)  42  50  44  53  pF 
C
IN4
  Input capacitance (CLK0, CLK1, CLK2)  25  30  25  30  pF 
C
IN5
  Input capacitance (DM0 ~ DM7, DM8 (for ECC))  6  7  6  7  pF 
C
OUT1
  Data & DQS input/output capacitance (DQ0 ~ DQ63)  6  7  6  7  pF 
C
OUT2
  Data input/output capacitance (CB0 ~ CB7)  -  -  6  7  PF 
D32PB12C25 
Symbol  Parameter/Condition 
Min  Max  Min Max
Unit
C
IN1
  Input capacitance (A0~A12, BA0~BA1, RAS, CAS, WE)  65  81  69  87  pF 
C
IN2
  Input capacitance (CKE0)  42  50  44  53  pF 
C
IN3
  Input capacitance (CS0)  42  50  44  53  pF 
C
IN4
  Input capacitance (CLK0, CLK1, CLK2)  28  34  28  34  pF 
C
IN5
  Input capacitance (DM0 ~ DM7, DM8 (for ECC))  10  12  10  12  pF 
C
OUT1
  Data & DQS input/output capacitance (DQ0 ~ DQ63)  10  12  10  12  pF 
C
OUT2
  Data input/output capacitance (CB0 ~ CB7)  -  -  10  12  pF 










