Datasheet

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1.5KE SERIES

Taiwan Semiconductor

1 Version: O2104

1500W, 6.8V - 440V Transient Voltage Suppressor

FEATURES

● AEC-Q101 qualified available

● Excellent clamping capability

● Low dynamic impedance

● 1500W surge capability at 10/1000μs waveform

● Fast response time: Typically less than 1.0ps from 0 volt to

for unidirectional and 5.0ns for bidirectional

● Typical I

less than 1μA above 10V

● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b)

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Protect sensitive circuit from damage by high voltage

transients

● Lighting, ESD transient voltage protection of IC, system

● Inductive switching load protection of IC, system

● Electrical Fast Transient Immunity protection of IC, system

MECHANICAL DATA

● Case: DO-201

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Pure tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: As marked

● Weight: 0.090g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

5.5 - 376

(uni - directional)

6.12 - 462

(bi - directional)

6.12 - 462

1500

J MAX

175

Package

DO-201

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Peak power dissipation at T

= 25°C, Tp = 1ms

(1)

1500

Steady state power dissipation at T

= 75°C

lead lengths .375", 9.5mm

(2)

Peak forward surge current, 8.3ms single half sine-wave

superimposed on rated load for Uni-directional only

FSM

200

Forward Voltage @ I

= 50A for Uni-directional only

(3)

3.5 / 5.0

Junction temperature

- 55 to +175

°C

Storage temperature

STG

- 55 to +175

°C

Notes:

1. Non-repetitive Current Pulse Per Fig.3 and Derated above T

= 25°C Per Fig.2

2. Mounted on Copper Pad Area of 0.6" x 0.6" (16mm x 16mm)

3. V

= 3.5V for Devices of V

≦ 200V and V

= 5.0V Max. for Devices V

> 200V

Devices for Bipolar Applications

1. For bidirectional use C or CA suffix for types 1.5KE6.8 - Types 1.5KE440

2. Electrical characteristics apply in both directions

Summary of content (8 pages)

PAGE 1
.5KE SERIES Taiwan Semiconductor 1500W, 6.8V - 440V Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Excellent clamping capability Low dynamic impedance 1500W surge capability at 10/1000μs waveform Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.
PAGE 2
1.5KE SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) JEDEC type number 1N6267 General part number 1.5KE6.8 Nominal Voltage Breakdown voltage VBR@IT (V) (Note 1) Min Max Maximum Working Test blocking stand-off current leakage voltage IT current VWM (mA) ID@VWM (V) (µA) Maximum peak Maximum Maximum impulse clamping temperature current voltage coefficient IPP VC@IPP of VBR(%/°C) (A) (V) (Note 2) 6.8 6.12 7.48 10 5.50 1000 145 10.8 0.057 1N6267A 1.
PAGE 3
1.5KE SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) JEDEC type number 1N6288 General part number 1.5KE51 Nominal Voltage Breakdown voltage VBR@IT (V) (Note 1) Min Max Maximum Working Test blocking stand-off current leakage voltage IT current VWM (mA) ID@VWM (V) (µA) Maximum peak Maximum Maximum impulse clamping temperature current voltage coefficient IPP VC@IPP of VBR(%/°C) (A) (V) (Note 2) 51 45.9 56.1 1.0 41.30 1 21 73.5 0.102 1N6288A 1.
PAGE 4
1.5KE SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) JEDEC type number General part number Nominal Voltage 1.5KE440A 440 Breakdown voltage VBR@IT (V) (Note 1) Min Max 418 462 Maximum Working Test blocking stand-off current leakage voltage IT current VWM (mA) ID@VWM (V) (µA) 1.0 376 1 Maximum peak Maximum Maximum impulse clamping temperature current voltage coefficient IPP VC@IPP of VBR(%/°C) (A) (V) (Note 2) 2.5 602 0.110 Notes: 1.
PAGE 5
1.5KE SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve 125 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in Fig.3 10 1 0.1 0.1 1 10 100 1000 With heat sink 100 75 50 25 Without heat sink 0 10000 0 tp, PULSE WIDTH, (μs) 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig.
PAGE 6
1.5KE SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Junction Capacitance CJ, JUNCTION CAPACITANCE (pF) 10000 VR=0 1000 100 VR-rated stand-off voltage f=1.
PAGE 7
1.
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1.5KE SERIES Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.