Datasheet

1N4001G – 1N4007G
Taiwan Semiconductor
1 Version: P2104
1A, 50V - 1000V Standard Rectifier
FEATURES
● AEC-Q101 qualified available
● Glass passivated chip junction
● High current capability, Low V
F
● High reliability
● High surge current capability
● Low power loss, high efficiency
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter
● Switching mode converters and inverters
● General purpose
MECHANICAL DATA
● Case: DO-204AL (DO-41)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: Indicated by cathode band
● Weight: 0.330g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
I
F
1
A
V
RRM
50 - 1000
V
I
FSM
30
A
T
J MAX
150
°C
Package
DO-204AL (DO-41)
Configuration
Single die
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
1N
4001G
1N
4002G
1N
4003G
1N
4004G
1N
4005G
1N
4006G
1N
4007G
UNIT
Marking code on the device
1N
4001G
1N
4002G
1N
4003G
1N
4004G
1N
4005G
1N
4006G
1N
4007G
Repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
V
Reverse voltage, total rms value
V
R(RMS)
35
70
140
280
420
560
700
V
Forward current
I
F
1
A
Surge peak forward current,
8.3ms single half sine wave
superimposed on rated load
I
FSM
30
A
Junction temperature
T
J
-55 to +150
°C
Storage temperature
T
STG
-55 to +150
°C