Datasheet

1N4001G – 1N4007G
Taiwan Semiconductor
2 Version: P2104
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance
R
ӨJA
80
°C/W
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage
(1)
I
F
= 1A, T
J
= 25°C
V
F
-
1
V
Reverse current @ rated V
R
(2)
T
J
= 25°C
I
R
-
5
µA
T
J
= 125°C
-
100
µA
Junction capacitance
1MHz, V
R
= 4.0V
C
J
10
-
pF
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE
(1)(2)
PACKAGE
PACKING
1N4xG
DO-204AL (DO-41)
5,000 / Tape & Reel
1N4xG A0G
DO-204AL (DO-41)
3,000 / Ammo box
1N4xGH
DO-204AL (DO-41)
5,000 / Tape & Reel
1N4xGHA0G
DO-204AL (DO-41)
3,000 / Ammo box
Notes:
1. “x” defines voltage from 50V (1N4001G) to 1000V (1N4007G)
2. “H” means AEC-Q101 qualified