Datasheet

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1N4148 / 1N4448 / 1N914B

Taiwan Semiconductor

Version:J1804

500mW, High Speed Switching Diode

FEATURES

● Low power loss, high efficiency

● Ideal for automated placement

● High surge current capability

● Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

MECHANICAL DATA

● Case: DO-35

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Polarity: Indicated by cathode band

● Weight: 125 ± 4 mg

KEY PARAMETERS

PARAMETER VALUE UNIT

150 mA

RRM

100 V

FSM

2 A

at I

=100mA 1 V

J MAX

150 °C

Package DO-35

Configuration Singal die

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

1N4148

1N4448

1N914B

UNIT

Power dissipation

500 mW

Repetitive peak reverse voltage

RRM

100 V

Non-Repetitive peak forward surge current

Pluse width = 1μs, Square wave

FSM

2 A

Non-Repetitive peak forward current

450 mA

Forward current I

150 mA

Junction temperature range T

-65 to +150 °C

Storage temperature range T

STG

-65 to +150 °C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-ambient thermal resistance R

ӨJA

240 °C/W

Summary of content (5 pages)

PAGE 1
N4148 / 1N4448 / 1N914B Taiwan Semiconductor 500mW, High Speed Switching Diode FEATURES KEY PARAMETERS ● ● ● ● Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) PARAMETER VALUE UNIT IF 150 mA VRRM 100 V IFSM 2 A VF at IF=100mA 1 V TJ MAX 150 °C Package DO-35 Configuration
PAGE 2
1N4148 / 1N4448 / 1N914B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS 1N4448,1N914B Forward voltage per diode (1) MIN MAX 0.62 0.72 - 1.00 - 1.
PAGE 3
1N4148 / 1N4448 / 1N914B Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Forward Characteristics Fig. 2 Reverse Current VS. Reverse Voltage 10000 1 TA=25°C Reverse Current :lR (nA) Forward Current (A) 100°C 0.1 0.01 0.001 1000 70°C 100 50°C TA=25°C 10 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 Forward Voltage (V) Fig.3 Admissible Power Dissipation Curve 60 80 100 120 Fig.4 Typical Junction Capacitance 500 1.5 400 1.
PAGE 4
1N4148 / 1N4448 / 1N914B Taiwan Semiconductor PACKAGE OUTLINE DIMENSION DO-35 DIM. Unit (mm) Unit (inch) Min Max Min Max A 0.34 0.60 0.013 0.024 B 2.90 5.08 0.114 0.200 C 25.40 38.10 1.000 1.500 D 1.30 2.28 0.051 0.
PAGE 5
1N4148 / 1N4448 / 1N914B Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document.