Datasheet

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1N4148W/1N4448W/1N914BW

Taiwan Semiconductor

Version: K1804

150mA, 75V Switching Diode

FEATURES

● Low power loss, high efficiency

● Ideal for automated placement

● High surge current capability

● Moisture sensitivity level: level 1, per J-STD-020

● Compliance to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● Lighting application

● On-board DC/DC converter

MECHANICAL DATA

● Case: SOD-123F

● Molding compound meets UL 94 V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: Indicated by cathode band

● Weight: 8.85 ± 0.5mg

KEY PARAMETERS

PARAMETER VALUE UNIT

150 mA

RRM

75 V

FSM

2 A

at I

=100mA 1.00 V

Max. 150 °C

Package SOD-123F

Configuration Single die

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Marking code on the device

1N4148W

1N4448W

1N914BW

Power dissipation

400 mW

Reverse voltage

100 V

Repetitive peak reverse voltage

RRM

75 V

Forward current I

150 mA

Repetitive peak forward current I

FRM

300 mA

Non-repetitive peak forward surge current @ t=1.0µs I

FSM

2 A

Junction temperature range T

-65 to +150 °C

Storage temperature range T

STG

-65 to +150 °C

Summary of content (5 pages)

PAGE 1
N4148W/1N4448W/1N914BW Taiwan Semiconductor 150mA, 75V Switching Diode FEATURES KEY PARAMETERS ● ● ● ● ● Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 Compliance to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 150 mA VRRM 75 V IFSM 2 A VF at IF=100mA 1.00 V TJ Max.
PAGE 2
1N4148W/1N4448W/1N914BW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL TYP UNIT RӨJA 450 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage (1) CONDITIONS 1N4448W, 1N914BW IF = 5mA, TJ = 25°C 1N4148W IF = 10mA, TJ = 25°C 1N4448W, 1N914BW IF = 100mA, TJ = 25°C IR=100µA, TJ = 25°C Reverse voltage Reverse leakage current IR=5µA, TJ = 25°C VR=20V TJ = 25°C (2) VR=75V TJ = 25°C 1 MHz, VR=0V Junction ca
PAGE 3
1N4148W/1N4448W/1N914BW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Forward Characteristics Fig.2 Reverse Current VS. Reverse Voltage 100 10 Reverse Current (µA) Instantaneous Forward Current (mA) 100 1 0.1 0.01 0.001 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 80 100 120 Reverse Voltage (V) Instantaneous Forward Voltage (V) Fig.3 Admissible Power Dissipation Curve Fig.
PAGE 4
1N4148W/1N4448W/1N914BW Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-123F DIM. Unit (mm) Unit (inch) Min Max Min Max A 1.50 1.70 0.059 0.067 B 3.30 3.90 0.130 0.154 C 0.50 0.70 0.020 0.028 D 2.50 2.70 0.098 0.106 E 0.80 1.15 0.031 0.045 F 0.05 0.20 0.002 0.008 SUGGEST PAD LAYOUT DIM. 4 Unit (mm) Unit (inch) Typ. Typ. C 2.86 0.113 G 1.52 0.060 X 1.34 0.053 X1 4.20 0.165 Y 1.80 0.
PAGE 5
1N4148W/1N4448W/1N914BW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document.