Datasheet

1N5400G – 1N5408G
Taiwan Semiconductor
1 Version: K2105
3A, 50V - 1000V Standard Rectifier
FEATURES
● AEC-Q101 qualified available
● Glass passivated chip junction
● High current capability, Low V
F
● High reliability
● High surge current capability
● Low power loss, high efficiency
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter
● Switching mode converters and inverters
● General purpose
MECHANICAL DATA
● Case: DO-201AD
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: Indicated by cathode band
● Weight: 1.20g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
I
F
3
A
V
RRM
50 - 1000
V
I
FSM
125
A
T
J MAX
150
°C
Package
DO-201AD
Configuration
Single die
DO-201AD
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
1N
5400G
1N
5401G
1N
5402G
1N
5404G
1N
5406G
1N
5407G
1N
5408G
UNIT
Marking code on the
device
1N
5400G
1N
5401G
1N
5402G
1N
5404G
1N
5406G
1N
5407G
1N
5408G
Repetitive peak reverse
voltage
V
RRM
50
100
200
400
600
800
1000
V
Reverse voltage, total rms
value
V
R(RMS)
35
70
140
280
420
560
700
V
Forward current
I
F
3
A
Surge peak forward
current, 8.3ms single half
sine wave superimposed
on rated load
I
FSM
125
A
Junction temperature
T
J
-55 to +150
°C
Storage temperature
T
STG
-55 to +150
°C