Datasheet

1N5817 – 1N5819
Taiwan Semiconductor
1 Version: H2104
1A, 20V - 40V Schottky Barrier Rectifier
FEATURES
● AEC-Q101 qualified available
● Low forward voltage drop
● Guard ring for overvoltage protection
● High surge current capability
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● DC to DC converter
MECHANICAL DATA
● Case: DO-204AL (DO-41)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: Indicated by cathode band
● Weight: 0.330g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
I
F
1
A
V
RRM
20 - 40
V
I
FSM
30
A
T
J MAX
125
°C
Package
DO-204AL (DO-41)
Configuration
Single die
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
1N5817
1N5818
1N5819
UNIT
Marking code on the device
1N5817
1N5818
1N5819
Repetitive peak reverse voltage
V
RRM
20
30
40
V
Reverse voltage, total rms value
V
R(RMS)
14
21
28
V
Forward current
I
F
1
A
Surge peak forward current, 8.3ms single
half sine wave superimposed on rated load
I
FSM
30
A
Critical rate of rise of off-state voltage
dv/dt
10,000
V/µs
Junction temperature
T
J
-55 to +125
°C
Storage temperature
T
STG
-55 to +125
°C