Datasheet

B0520LW,B0530W,B0540W
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) under plate
- Halogen-free according to IEC 61249-2-21
- Case: Bend lead SOD-123 small outline plastic package
- Polarity: Indicated by cathode band
- Weight: 0.01 g (approximately)
SYMBOL UNIT
P
D
mW
V
RRM
V
V
R
V
I
O
mA
I
FSM
A
R
θJA
°C/W
T
J
, T
STG
°C
Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load
Notes: 2. Valid provided that electrodes are kept at ambient temperature
SYMBOL UNIT
I
R
=250μA
I
R
=130μA
I
R
=20μA
I
F
=100mA
I
F
=500mA
I
F
=1000mA
V
R
= 10V
V
R
= 15V
V
R
= 20V
V
R
= 30V
V
R
= 40V
V
R
= 0 V C
J
pF
Version: I1601
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Junction Capacitance
T
J
= 25°C
f=1.0MHz
-
V
(BR)
0.300
170
Reverse Leakage Current
(Maximum Value)
I
R
-
20
-
250
0.385
0.510
-
75
-
0.620
40
-
μA
28
40
20
-55 to +125
244
10
-
-
V
B0520LW
B0540W
-
410
5.5
500
20
V
Junction and Storage Temperature Range
Power Dissipation
PARAMETER
B0520LW
B0540W
SOD-123
MECHANICAL DATA
- Terminal: Matte tin plated, lead free,
Reverse Voltage
-
V
F
Forward Voltage
(Maximum Value)
T
J
= 25°C
-
-
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER
Reverse Breakdown Voltage
(Minimum Value)
Taiwan Semiconductor
Small Signal Product
Low VF SMD Schottky Barrier Diode
FEATURES
Thermal Resistance (Junction to Ambient) (Note 2)
14
Repetitive Peak Reverse Voltage
Mean Forward Current @ T
L
=100°C (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)

Summary of content (5 pages)