Datasheet

ManualsBrandsTaiwan Semiconductor ManualsActive ComponentsRectifier 1 mA Single Tape

BA157G-K – BA159G-K

Taiwan Semiconductor

1 Version: B2104

1A, 400V - 1000V Fast Recovery Rectifier

FEATURES

● Glass passivated chip junction

● High current capability, Low V

● High reliability

● High surge current capability

● Low power loss, high efficiency

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● DC to DC converter

MECHANICAL DATA

● Case: DO-204AL (DO-41)

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Pure tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: Indicated by cathode band

● Weight: 0.330g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

400 - 1000

FSM

J MAX

150

°C

Package

DO-204AL (DO-41)

Configuration

Single die

DO-204AL (DO-41)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

BA157G-K

BA158G-K

BA159G-K

UNIT

Marking code on the device

BA157G

BA158G

BA159G

Repetitive peak reverse voltage

RRM

400

600

1000

Reverse voltage, total rms value

R(RMS)

280

420

700

Forward current

Surge peak forward current, 8.3ms single

half sine wave superimposed on rated load

FSM

Junction temperature

-55 to +150

°C

Storage temperature

STG

-55 to +150

°C

Summary of content (6 pages)

PAGE 1
BA157G-K – BA159G-K Taiwan Semiconductor 1A, 400V - 1000V Fast Recovery Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 1 A VRRM 400 - 1000 V IFSM 30 A TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die ● Switching mode power supply (SMPS)
PAGE 2
BA157G-K – BA159G-K Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJA 60 °C/W Junction-to-ambient thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR IF = 1A, TJ = 25°C (2) Junction capacitance Reverse recovery time TJ = 25°C SYMBOL TYP MAX UNIT VF - 1.3 V - 5 µA - 100 µA CJ 15 - pF trr - 500 ns IR TJ = 125°C 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.
PAGE 3
BA157G-K – BA159G-K Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) 1 10 f=1.0MHz Vsig=50mVp-p 1 0 25 50 75 100 125 1 150 10 AMBIENT TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125°C TJ=75°C 1 TJ=25°C 0.1 10 20 30 40 50 60 70 80 90 100 1010 UF1DLW 1 TJ=125°C TJ=25°C 10.1 0.01 0.
PAGE 4
BA157G-K – BA159G-K Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.
PAGE 5
BA157G-K – BA159G-K Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-204AL (DO-41) MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: B2104
PAGE 6
BA157G-K – BA159G-K Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.