Datasheet

ManualsBrandsTaiwan Semiconductor ManualsDiodesSchottky Diode 200mA SOD-323F

BAT42WS/BAT43WS

Taiwan Semiconductor

1 Version:G1709

200mA, 30V Schottky Barrier Diode

FEATURES

● Designed for mounting on small surface

● Low capacitance

● Low forward voltage drop

● Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Adapters

● For switching power supply

● Low stored charge

● Inverter

MECHANICAL DATA

● Case: SOD-323F

● Molding compound meets UL 94 V-0 flammability rating

● Moisture sensitivity level: level 1, per J-STD-020

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: Indicated by cathode band

KEY PARAMETERS

PARAMETER

VALUE

UNIT

F(AV)

200

RRM

FSM

at I

=200mA

Max.

125

°C

Package

SOD-323F

Configuration

Single dice

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

BAT42WS

BAT43WS

UNIT

Marking code on the device

Repetitive peak reverse voltage

RRM

Maximum dc blocking voltage

Average rectified forward current

F(AV)

200

Peak forward surge current

FSM

Junction temperature range

-65 to +125

°C

Storage temperature range

STG

-65 to +125

°C

Summary of content (5 pages)

PAGE 1
BAT42WS/BAT43WS Taiwan Semiconductor 200mA, 30V Schottky Barrier Diode FEATURES KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) 200 mA VRRM 30 V IFSM 4 A VF at IF=200mA 1 V APPLICATIONS TJ Max.
PAGE 2
BAT42WS/BAT43WS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN MAX - 1.00 - 0.40 - 0.65 IF = 200mA, TJ = 25°C BAT42WS IF = 10mA, TJ = 25°C IF = 50mA, Forward voltage per diode TJ = 25°C (1) IF = 200mA, VF V TJ = 25°C BAT43WS IF = 2mA, TJ = 25°C IF = 15mA, TJ = 25°C Reverse voltage Reverse current @ rated VR per diode (2) Junction capacitance - 1.00 - 0.33 - 0.
PAGE 3
BAT42WS/BAT43WS Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Forward Characteristics 100 IF, Instantaneous Forward Current (mA) IO, Average Rectified Current (mA) 120 100 Tj=125oC 80 60 40 20 0 10 TA= -25oC TA= 25oC TA= 75oC TA= 125oC 1 0.1 0 25 50 75 100 125 150 0 o 400 600 800 VF, Instantaneous Forward Voltage (mV) TA, Ambient Temperature ( C) Fig.3 Typical Reverse Characteristics Fig.
PAGE 4
BAT42WS/BAT43WS Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-323F DIM. Unit(mm) Unit(inch) Min Max Min Max A 1.15 1.35 0.045 0.053 B 2.30 2.80 0.091 0.110 C 0.25 0.40 0.010 0.016 D 1.60 1.80 0.063 0.071 E 0.80 1.10 0.031 0.043 F 0.05 0.25 0.002 0.010 SUGGEST PAD LAYOUT Unit(mm) Unit(inch) Typ. Typ. A 0.63 0.025 DIM. 4 B 0.83 0.033 C 1.60 0.063 D 2.86 0.
PAGE 5
BAT42WS/BAT43WS Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document.