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BAT42WS/BAT43WS

Taiwan Semiconductor

1 Version:H2007

200mA, 30V Schottky Barrier Diode

FEATURES

● Designed for mounting on small surface

● Low capacitance

● Low forward voltage drop

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Adapters

● For switching power supply

● Inverter

MECHANICAL DATA

● Case: SOD-323F

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: Indicated by cathode band

KEY PARAMETERS

PARAMETER

VALUE

UNIT

200

RRM

FSM

at I

= 200mA

J MAX

125

°C

Package

SOD-323F

Configuration

Single die

SOD-323F

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

BAT42WS

BAT43WS

UNIT

Marking code on the device

Repetitive peak reverse voltage

RRM

Maximum dc blocking voltage

Average rectified forward current

200

Peak forward surge current

FSM

Junction temperature range

-65 to +125

°C

Storage temperature range

STG

-65 to +125

°C

Summary of content (5 pages)

PAGE 1
BAT42WS/BAT43WS Taiwan Semiconductor 200mA, 30V Schottky Barrier Diode FEATURES ● ● ● ● ● ● KEY PARAMETERS Designed for mounting on small surface Low capacitance Low forward voltage drop Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 200 mA VRRM 30 V IFSM 4 A VF at IF = 200mA 1 V 125 °C TJ APPLICATIONS ● Adapters ● For switching power supply ● Inverter MAX Package SOD-323F Configuration Single die
PAGE 2
BAT42WS/BAT43WS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL IF = 200mA, TJ = 25°C BAT42WS IF = 10mA, TJ = 25°C Forward voltage IF = 50mA, TJ = 25°C (1) VF IF = 200mA, TJ = 25°C BAT43WS IF = 2mA, TJ = 25°C IF = 15mA, TJ = 25°C Reverse voltage Reverse current @ rated VR (2) Junction capacitance Reverse recovery time MIN TYP MAX UNIT - - 1.00 V - - 0.40 V - - 0.65 V - - 1.00 V - - 0.33 V - - 0.
PAGE 3
BAT42WS/BAT43WS Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Typical Forward Characteristics AVERAGE RECTIFIED CURRENT (mA) 250 200 150 100 50 0 0 25 50 75 100 125 INSTANTANEOUS FORWARD CURRENT (mA) Fig.1 Forward Current Derating Curve 100 10 TA= -25oC TA= 25oC TA= 75oC TA= 125oC 1 0.1 0 o 400 600 800 INSTANTANEOUS FORWARD VOLTAGE (mV) AMBIENT TEMPERATURE ( C) Fig.3 Typical Reverse Characteristics Fig.4 Total Capacitance VS.
PAGE 4
BAT42WS/BAT43WS Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-323F SUGGEST PAD LAYOUT 4 Version:H2007
PAGE 5
BAT42WS/BAT43WS Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.