Datasheet

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BAV19/BAV20/BAV21

Taiwan Semiconductor

1 Version:E1610

200mA,120-250V Switching Diode

FEATURES

● Low power loss, high efficiency

● Ideal for automated placement

● High surge current capability

● Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● Lighting application

● On-board DC/DC converter

MECHANICAL DATA

● Case: DO-35

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Polarity: Indicated by cathode band

● Weight: 109 ± 4 mg (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

F(AV)

100-200

RRM

120-250

FSM

at PW = 1μs

at I

=100mA

1.00

J MAX

175

°C

Package

DO-35

Configuration

Single Die

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

PART NUMBER

UNIT

Marking code on the device

BAV19

BAV20

BAV21

Reverse Breakdown Voltage IR = 100 μA

(BR)

120

200

250

Peak Forward Surge Current

Pulse Width = 1 s , Square

Wave

FSM

Pulse Width = 1 μs , Square

Wave

Junction temperature range

-55 ~ 175

°C

Storage temperature range

STG

-55 ~ 175

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-ambient thermal resistance

ӨJA

300

°C/W

Summary of content (6 pages)

PAGE 1
BAV19/BAV20/BAV21 Taiwan Semiconductor 200mA,120-250V Switching Diode FEATURES KEY PARAMETERS ● ● ● ● Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF(AV) 100-200 mA VRRM 120-250 V IFSM at PW = 1μs 4 A VF at IF=100mA 1.
PAGE 2
BAV19/BAV20/BAV21 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS Forward voltage per diode IF = 100mA, TJ = 25°C (1) (2) BAV19 VR = 100 V BAV20 VR = 150 V BAV21 VR = 200 V 1 MHz, VR=0V Junction capacitance TYP MAX UNIT -- 1.00 V -- 1.25 V IR -- 100 nA CJ -- 5 ρF VF IF = 200mA, TJ = 25°C Reverse current @ rated VR per diode SYMBOL Notes: 1. Pulse test with PW=0.3 ms 2.
PAGE 3
BAV19/BAV20/BAV21 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Reverse Voltage VS. Reverse Current Reverse Current VS. Reverse Voltage 325 50 Reverse Current (nA) Reverse Voltage (V) TA=25oC 300 TA=25oC 40 30 20 10 275 0 1 10 100 10 100 1000 Reverse Voltage (V) Reverse Current (uA) Reverse Current VS. Reverse Voltage Forward Voltage VS.
PAGE 4
BAV19/BAV20/BAV21 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Forward Volatage VS. Forward Current Forward Volatage VS. Forward Current 1.4 1.3 Forward Voltage (V) Forward Voltage (mV) 700 TA=25oC 650 600 550 500 TA=25oC 1.2 1.1 1 0.9 0.8 0.7 450 0.
PAGE 5
BAV19/BAV20/BAV21 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION DO-35 DIM. Unit(mm) Unit(inch) Min Max Min Max A 0.34 0.60 0.013 0.024 B 2.90 5.08 0.114 0.200 C 25.40 38.10 1.000 1.500 D 1.30 2.28 0.051 0.
PAGE 6
BAV19/BAV20/BAV21 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document.