Datasheet

BAW56, BAV70, BAV99
225mW SMD Switching Diode
Small Signal Diode
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min Max Min Max
Case :SOT-23 small outline plastic package 2.80 3.00 0.110 0.118
1.20 1.40 0.047 0.055
0.30 0.50 0.012 0.020
1.80 2.00 0.071 0.079
2.25 2.55 0.089 0.100
0.90 1.20 0.035 0.043
Maximum Ratings
Electrical Characteristics
I
R
=
100μA
I
F
=
50mA
I
F
=
150mA
Reverse Leakage Current
V
R
=
70V
Junction Capacitance
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
I
FSM A
Pulse Width=1 μsec
Non-Repetitive Peak Forward
Surge Current (Note 1)
Pulse Width=1 sec 0.5
2
V
-55 to + 150
450
357
mA
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Fast switching speed, High conductance
Unit (mm)
Dimensions
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
B
C
High temperature soldering guaranteed:
Weight : 0.008gram (approximately)
G
Features
Mechanical Data
Unit (inch)
A
Rating at 25°C ambient temperature unless otherwise specified.
Power Dissipation
Maximum Ratings and Electrical Characteristics
D
E
F
Repetitive Peak Forward Current I
FRM
Mean Forward Current IO
SymbolType Number Value
Repetitive Peak Reverse Voltage V
RRM
225PD
-
70 - V
ns6.0
Reverse Breakdown Voltage
Units
1.5
mW
70
200
MaxMin
-
mA
Type Number
Thermal Resistance (Junction to Ambient) (Note 2) RθJA °C/W
Symbol
°C
2.50
-
-
Units
Reverse Recovery Time I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Trr
V
(BR)
V
I
R μA
- 1.25 V
V
F
0.550 REF 0.022 REF
SOT-23
V
R
=0V, f=1.0MHz
C
J
Junction and Storage Temperature Range TJ, TSTG
Forward Voltage
pF
1.00
BAW56 BAV99BAV70
B
A
C
D
G
F
E
Version : D09