Datasheet

BZT52B2V4-G - BZT52B43-G
Taiwan Semiconductor
1 Version: G1810
410mW 2% Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.4V to 43V
● V
Z
Tolerance Selection of ± 2%
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOD-123
● Molding compound: UL flammability classification
rating 94V-0
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 10.54mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
V
Z
2.4-43 V
Test current I
ZT
5 mA
P
tot
410 mW
V
F
at I
F
=10mA 0.9 V
T
J
Max. 150 °C
Package SOD-123
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Forward voltage @ I
F
=10mA
V
F
0.9 V
Total power dissipation
P
tot
410 mW
Junction temperature range T
J
-55 to +150 °C
Storage temperature range T
STG
-55 to +150 °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance R
ӨJA
357 °C/W