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BZW06 SERIES

Taiwan Semiconductor

1 Version: K2105

600W, 12.8V - 376V Transient Voltage Suppressor

FEATURES

● AEC-Q101 qualified available

● Excellent clamping capability

● Low dynamic impedance

● 600W surge capability at 10/1000μs waveform

● Fast response time: Typically less than 1.0ps from 0 volt to

for unidirectional and 5.0ns for bidirectional

● Typical I

less than 1μA above 10V

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Protect sensitive circuit from damage by high voltage

transients

● Lighting, ESD transient voltage protection of IC, system

● Inductive switching load protection of IC, system

● Electrical Fast Transient Immunity protection of IC, system

MECHANICAL DATA

● Case: DO-204AC (DO-15)

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Pure tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: As marked

● Weight: 0.400g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

12.8 - 376

(uni - directional)

14.3 - 462

(bi - directional)

14.3 - 462

600

J MAX

175

°C

Package

DO-204AC (DO-15)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Peak power dissipation at T

= 25°C, Tp = 1ms

(1)

600

Steady state power dissipation at T

= 75°C

lead lengths .375", 9.5mm

(2)

1.7

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

(3)

FSM

100

Operating junction temperature range

-55 to +175

°C

Storage temperature range

STG

-55 to +175

°C

Note:

1. Non-repetitive current pulse per Fig.3

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-lead thermal resistance

ӨJL

°C/W

Junction-to-ambient thermal resistance, L lead = 10mm

ӨJA

100

°C/W

Summary of content (8 pages)

PAGE 1
BZW06 SERIES Taiwan Semiconductor 600W, 12.8V - 376V Transient Voltage Suppressor FEATURES KEY PARAMETERS ● ● ● ● ● AEC-Q101 qualified available Excellent clamping capability Low dynamic impedance 600W surge capability at 10/1000μs waveform Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional ● Typical IR less than 1μA above 10V ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 12.
PAGE 2
BZW06 SERIES Taiwan Semiconductor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Breakdown voltage VBR@IT (V)(1) Test current IT (mA) Working stand-off voltage VWM (V) Reverse leakage @ VWM ID (uA) VBR IT VWM IR VC IPPM VC IPPM VBR V mA V μA V A V A %/°C Part Number Clamping Voltage @IPPM (10/1000us) Clamping Voltage @IPPM (8/20us) Maximum temperature coefficient(2) Uni Bi Min Nom Max Max BZW06-13 BZW06-13B 14.3 15 15.8 1 12.8 5 21.
PAGE 3
BZW06 SERIES Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING BZW06-x DO-204AC (DO-15) 3,500 / Tape & Reel BZW06-x A0G DO-204AC (DO-15) 1,500 / Ammo box BZW06-xH DO-204AC (DO-15) 3,500 / Tape & Reel BZW06-xHA0G DO-204AC (DO-15) 1,500 / Ammo box Notes: 1. “x” defines voltage from 12.8V (BZW06-13) to 376V (BZW06-376) 2.
PAGE 4
BZW06 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve 125 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) NON-REPETITIVE PULSE WAVEFORM SHOWN in Fig.3 100 10 1 0.1 0.01 0.001 0.01 0.
PAGE 5
BZW06 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Junction Capacitance 10000 10000 1000 CJ, JUNCTION CAPACITANCE (pF) CJ, JUNCTION CAPACITANCE (pF) Fig.5 Typical Junction Capacitance BZW06-13 BZW06-58 100 BZW06-171 10 f=1.0MHz Vsig=50mVp-p 1000 BZW06-13B BZW06-171B 10 f=1.0MHz Vsig=50mVp-p 1 1 10 100 BZW06-58B 100 1 1000 1 10 V(BR), BREAKDOWN VOLTAGE (V) 1000 V(BR), BREAKDOWN VOLTAGE (V) Fig.
PAGE 6
BZW06 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.9 Clamping Voltage Curve VCL, CLAMPING VOLTAGE(V) 1000 100 10 tp=20μs tp=1ms tp=10ms 1 0.
PAGE 7
BZW06 SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-204AC (DO-15) MARKING DIAGRAM Cathode band for uni-directional products only 7 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2105
PAGE 8
BZW06 SERIES Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.