Datasheet

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ES1AL – ES1JL

Taiwan Semiconductor

1 Version: L2103

1A, 50V - 600V Super Fast Surface Mount Rectifier

FEATURES

● Glass passivated chip junction

● Ideal for automated placement

● Low profile Package

● Low power loss, high efficiency

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● DC to DC converter

● Switching mode converters and inverters

● Freewheeling application

MECHANICAL DATA

● Case: Sub SMA

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Indicated by cathode band

● Weight: 0.019g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

50 - 600

FSM

J MAX

150

°C

Package

Sub SMA

Configuration

Single die

Sub SMA

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

1AL

1BL

1CL

1DL

1FL

1GL

1HL

1JL

UNIT

Marking code on the device

EAL

EBL

ECL

EDL

EFL

EGL

EHL

EJL

Repetitive peak reverse voltage

RRM

100

150

200

300

400

500

600

Reverse voltage, total rms value

R(RMS)

105

140

210

280

350

420

Forward current

Peak forward surge current,

8.3ms single half sine-wave

superimposed on rated load

FSM

Junction temperature

- 55 to +150

°C

Storage temperature

STG

- 55 to +150

°C

Summary of content (6 pages)

PAGE 1
ES1AL – ES1JL Taiwan Semiconductor 1A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low profile Package Low power loss, high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1 A VRRM 50 - 600 V IFSM 30 A TJ MAX 150 °C APPLICATIONS Package Sub SMA Configuration Single die ● DC to DC converter ●
PAGE 2
ES1AL – ES1JL Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 35 °C/W Junction-to-ambient thermal resistance RӨJA 85 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS ES1AL ES1BL ES1CL ES1DL ES1FL ES1GL ES1HL ES1JL (1) Reverse current @ rated VR TJ = 25°C (2) Junction capacitance IF = 1A, TJ = 25°C Reverse recovery time 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.
PAGE 3
ES1AL – ES1JL Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 14 12 ES1AL-ES1DL CAPACITANCE (pF) 1 10 8 ES1FL - ES1JL 6 4 2 0 25 50 75 100 125 f=1.0MHz Vsig=50mVp-p 0 150 0.
PAGE 4
ES1AL – ES1JL Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.
PAGE 5
ES1AL – ES1JL Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Sub SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: L2103
PAGE 6
ES1AL – ES1JL Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.