Datasheet

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ES3A – ES3J

Taiwan Semiconductor

1 Version: N2102

3A, 50V - 600V Super Fast Surface Mount Rectifier

FEATURES

● Glass passivated chip junction

● Ideal for automated placement

● Super fast recovery time for high efficiency

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● High frequency rectification

● Freewheeling application

● Switching mode converters and inverters in computer,

and telecommunication.

MECHANICAL DATA

● Case: DO-214AB (SMC)

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Indicated by cathode band

● Weight: 0.210g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

50 - 600

FSM

100

J MAX

150

°C

Package

DO-214AB (SMC)

Configuration

Single die

DO-214AB (SMC)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

ES3A

ES3B

ES3C

ES3D

ES3F

ES3G

ES3H

ES3J

UNIT

Marking code on the device

ES3A

ES3B

ES3C

ES3D

ES3F

ES3G

ES3H

ES3J

Repetitive peak reverse voltage

RRM

100

150

200

300

400

500

600

Reverse voltage, total rms value

R(RMS)

105

140

210

280

350

420

Forward current

Peak forward surge current,

8.3ms single half sine-wave

superimposed on rated load

FSM

100

Junction temperature

- 55 to +150

°C

Storage temperature

STG

- 55 to +150

°C

Summary of content (6 pages)

PAGE 1
ES3A – ES3J Taiwan Semiconductor 3A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Super fast recovery time for high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 3 A VRRM 50 - 600 V IFSM 100 A TJ MAX 150 °C APPLICATIONS ● High frequency rectification ● Freewheeling application ● Switching mode conv
PAGE 2
ES3A – ES3J Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 12 °C/W Junction-to-ambient thermal resistance RӨJA 47 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J (1) Reverse current @ rated VR TJ = 25°C (2) Junction capacitance IF = 3A, TJ = 25°C Reverse recovery time 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.
PAGE 3
ES3A – ES3J Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 90 75 3 CAPACITANCE (pF) 2 1 60 45 ES3A - ES3D 30 ES3F - ES3J 15 0 f=1.0MHz Vsig=50mVp-p 0 25 50 75 100 125 150 1 10 LEAD TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 1000 100 TJ=125°C 10 TJ=75°C 1 TJ=25°C 0.
PAGE 4
ES3A – ES3J Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.01 0.1 1 10 100 PULSE DURATION (s) Fig.
PAGE 5
ES3A – ES3J Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: N2102
PAGE 6
ES3A – ES3J Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.