Datasheet
MMBT2222A
Taiwan Semiconductor
1 Version:F1703
300mW, NPN Small Signal Transistor
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOT-23
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 8 mg (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
V
CBO
75
V
V
CEO
40
V
V
EBO
6
V
I
C
600
mA
h
FE
300
Package
SOT-23
Configuration
Single Dice
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
MMBT2222A
UNIT
Marking code on the device
1P
Collector-base voltage, emitter open
V
CBO
75
V
Collector-emitter voltage, base open
V
CEO
40
V
Emitter-base voltage, collector open
V
EBO
6
V
Collector current, dc
I
C
600
mA
Total dc power input to all terminals
P
T
300
mW
Junction temperature
T
J
-55 to +150
°C
Storage temperature
T
STG
-55 to +150
°C