Datasheet

ManualsBrandsTaiwan Semiconductor ManualsActive ComponentsTransistor (BJT) - Discrete SOT 23 Tape on Full reel

MMBT3904

Taiwan Semiconductor

Version: E2001

300mW, NPN Small Signal Transistor

FEATURES

● Low power loss, high efficiency

● Ideal for automated placement

● High surge current capability

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● Lighting application

● On-board DC/DC converter

MECHANICAL DATA

● Case: SOT-23

● Molding compound meets UL 94 V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Weight: 8 mg (approximately)

KEY PARAMETERS

PARAMETER VALUE UNIT

CBO

60 V

CEO

40 V

EBO

6 V

200 mA

400

Package SOT-23

Configuration Single die

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

MMBT3904

UNIT

Marking code on the device 1AM

Collector-base voltage V

CBO

Collector-emitter voltage V

CEO

Emitter-base voltage V

EBO

Collector current I

200

Power dissipation P

300

Junction temperature

-55 to +150

°C

Storage temperature

STG

-55 to +150

°C

Summary of content (6 pages)

PAGE 1
MMBT3904 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter PARAMETER VALUE UNIT VCBO 60 V VCEO 40 V VEBO 6 V IC 200 mA hFE 400 Package S
PAGE 2
MMBT3904 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT IC = 10 μA, IE = 0 V(BR)CBO 60 - - V IC = 1 mA, IB = 0 V(BR)CEO 40 - - V IE = 10 μA, IC = 0 V(BR)EBO 6 - - V Collector cutoff current VCB = 60 V, IE = 0 ICBO - - 0.1 µA Collector cutoff current VCE = 30 V, VBE(OFF) = 3 V ICEO - - 50 nA Emitter cutoff current VEB = 5 V, IC = 0 IEBO - - 0.
PAGE 3
MMBT3904 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1 Typical Pulsed Current Gain VS. Collector Current Fig.2 Collector-Emitter Saturation Voltage VS. Collector Current 0.20 V CESAT- Collector-Emitter Voltage (V) hFE - Typical Pulsed Current Gain 500 VCE = 5V 125 °C 400 300 25 °C 200 - 40 °C 100 0 0.15 β = 10 125 °C 0.10 25 °C 0.05 - 40 °C 0.00 0.1 1.0 10.0 100.0 0 IC - Collector Current (mA) 10 100 IC - Collector Current (mA) Fig.
PAGE 4
MMBT3904 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 5 Collector-Cutoff Current Fig. 6 Capacitance VS. Reverse Bias Voltage VS. Ambient Temperature 10 f = 1.0 MHz 100 VCB= 30V Capacitance (pF) ICBO-Collector Current (nA) 1000 10 1 Cibo Cobo 0.1 0.01 1 25 50 75 100 125 150 0.
PAGE 5
MMBT3904 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOT-23 SUGGESTED PAD LAYOUT 5 Version: E2001
PAGE 6
MMBT3904 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.