Datasheet

P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
1 Version:N1701
600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor
FEATURES FEATURES
● Low profile package
● Ideal for automated placement
● Glass passivated junction
● Built-in strain relief
● Excellent clamping capability
● Typical I
R
less than 1μA above 10V
● Fast response time: Typically less than
1.0ps from 0 volt to BV min
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● TV
● Monitor
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Moisture sensitivity level: level 1, per J-STD-020
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
Weight: 0.09 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
V
WM
5.5 - 185
V
V
BR
(uni-directional)
6.8 - 220
V
P
PPSM
600
W
T
J MAX
150
°C
Package
DO-214AA (SMB)
Configuration
Single die
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
PART NUMBER
UNIT
Non-repetitive peak impulse power dissipation with
10/1000μs waveform
P
PPSM
600
W
Steady state power dissipation at T
A
=25°C
(1)
P
tot
3
W
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100
A
Forward Voltage @ I
F
=50A for Uni-directional only
(2)
V
F
3.5/5.0
V
Junction temperature
T
J
-55 to +150
°C
Storage temperature
T
STG
-55 to +150
°C
Notes:
1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25°C Per Fig. 2
2. V
F
=3.5V on P6SMB6.8 - P6SMB91 Devices and V
F
=5.0V on P6SMB100 - P6SMB220 Device.
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A
2. Electrical characteristics apply in both directions