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RB751V-40

Taiwan Semiconductor

1 Version:E1701

200mW, 0.37V Schottky Barrier Diode

FEATURES

● Designed for mounting on small surface

● Low Capacitance

● Low forward voltage drop

● Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Adapters

● For switching power supply

● Low stored charge

● Inverter

MECHANICAL DATA

● Case: SOD-323

● Molding compound meets UL 94 V-0 flammability rating

● Moisture sensitivity level: level 1, per J-STD-020

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Matte Au plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: Indicated by cathode band

● Weight: 0.004grams (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

F(AV)

RRM

FSM

0.2

at I

=1mA

0.37

Max.

125

°C

Package

SOD-323

Configuration

Single dice

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

PART NUMBER

UNIT

Marking code on the device

Repetitive peak reverse voltage

RRM

Forward current

F(AV)

Non-repetitive peak forward surge current @ t = 8.3ms

FSM

0.2

Junction temperature range

-45 to +125

°C

Storage temperature range

STG

-45 to +125

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-ambient thermal resistance

(1)

ӨJA

500

°C/W

Notes:

1. Valid provided that terminals are kept at ambient temperatureulse

Summary of content (5 pages)

PAGE 1
RB751V-40 Taiwan Semiconductor 200mW, 0.37V Schottky Barrier Diode FEATURES KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) 30 mA VRRM 40 V IFSM 0.2 A VF at IF=1mA 0.37 V APPLICATIONS TJ Max.
PAGE 2
RB751V-40 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS Forward voltage per diode (1) Reverse current @ rated VR per diode (2) Junction capacitance SYMBOL TYP MAX UNIT IF = 1mA, TJ = 25°C VF -- 0.37 V VR=30V TJ = 25°C IR -- 0.5 μA 1 MHz, VR=0V CJ 2 ρF Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO.
PAGE 3
RB751V-40 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Forward Characteristics Fig.2 Forward Current Derating Curve 0.4 Io: Mean Forward Current (A) IF, Forward Current (mA) 100 TA=25oC 10 1 0.1 0.32 0.24 0.16 0.08 0 0.01 0.0 0.2 0.4 0.6 0.8 0 1.0 25 VF, Forward Voltage (V) 75 100 125 150 Terminal Temperature (°C) Fig.3 Admissible Power Dissipation Curve Fig.
PAGE 4
RB751V-40 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-323 DIM. Unit(mm) Unit(inch) Min Max Min Max A 1.150 1.400 0.045 0.055 B 2.300 2.700 0.091 0.106 C 0.250 0.450 0.010 0.018 D 1.600 1.800 0.063 0.071 E 0.800 1.000 0.031 0.039 F 0.050 0.177 0.002 0.007 G H 0.475 REF -- 0.100 0.019 REF -- 0.004 SUGGEST PAD LAYOUT Unit(mm) Unit(inch) Typ. Typ. A 0.63 0.025 DIM. 4 B 0.83 0.033 C 1.60 0.063 D 2.86 0.
PAGE 5
RB751V-40 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document.