Datasheet

CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- High temperature metallurgically bonded construction
- Fast switching for high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
FAL FBL FDL FGL FJL FKL FML
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
C
J
pF
t
rr
250 ns
T
J
°C
T
STG
°C
Document Number: DS_D1410008 Version: L15
T
J
=125°C
RSFAL - RSFML
Taiwan Semiconductor
0.5A, 50V - 1000V Surface Mount Fast Recover
y
Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: Sub SMA
Sub SMA
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
RSF
JL
10
I
R
5
RSF
ML
UNIT
RSF
KL
RSF
BL
RSF
DL
RSF
GL
Marking code
Maximum repetitive peak reverse voltage
PARAMETER SYMBOL
RSF
AL
Note 1: Pulse test with PW=300μs, 1% duty cycle
Maximum reverse recovery time (Note 3)
Typical thermal resistance
R
θJC
R
θJA
μA
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.5
4
50
Typical junction capacitance (Note 2)
Maximum reverse current @ rated V
R
T
J
=25°C
A
Maximum instantaneous forward voltage (Note 1)
@ 0.5 A
V
F
1.3 V
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
150 500
32
150
°C/W
Operating junction temperature range
Storage temperature range - 55 to +150
- 55 to +150