Datasheet

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S1A – S1M

Taiwan Semiconductor

1 Version: S2102

1A, 50V - 1000V Surface Mount Rectifier

FEATURES

● Glass passivated chip junction

● Ideal for automated placement

● Low forward voltage drop

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● DC to DC converter

● Switching mode converters and inverters

● Lighting application

● Snubber

● General purpose

MECHANICAL DATA

● Case: DO-214AC (SMA)

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Indicated by cathode band

● Weight: 0.060g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

50 - 1000

FSM

30, 40

J MAX

175

°C

Package

DO-214AC (SMA)

Configuration

Single die

DO-214AC (SMA)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

S1A

S1B

S1D

S1G

S1J

S1K

S1M

UNIT

Marking code on the device

S1A

S1B

S1D

S1G

S1J

S1K

S1M

Repetitive peak reverse voltage

RRM

100

200

400

600

800

1000

Reverse voltage, total rms value

R(RMS)

140

280

420

560

700

Forward current

Peak forward surge current, 8.3ms

single half sine wave superimposed

on rated load

FSM

Non-repetitive peak reverse avalanche

energy, I

= 1A, L = 10mH

RSM

Junction temperature

- 55 to +175

°C

Storage temperature

STG

- 55 to +175

°C

Summary of content (6 pages)

PAGE 1
S1A – S1M Taiwan Semiconductor 1A, 50V - 1000V Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low forward voltage drop Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1 A VRRM 50 - 1000 V IFSM 30, 40 A TJ MAX 175 °C APPLICATIONS ● ● ● ● ● DC to DC converter Switching mode converters and inverters Lighting application Snubber General
PAGE 2
S1A – S1M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL S1A S1B S1D S1G S1J S1K S1M S1A S1B S1D S1G S1J S1K S1M Junction-to-lead thermal resistance Junction-to-ambient thermal resistance TYP UNIT 27 °C/W 30 °C/W 75 °C/W 85 °C/W RӨJL RӨJA ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS Forward voltage (1) Reverse current @ rated VR IF = 1A, TJ = 25°C (2) Junction capacitance Reverse recovery time TJ = 25°C SYMBOL TYP MAX UNIT VF - 1.
PAGE 3
S1A – S1M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) 1 10 f=1.0MHz Vsig=50mVp-p 1 0 25 50 75 100 125 150 0.1 175 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C TJ=75°C 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 10 10 UF1DLW 1 TJ=125°C TJ=25°C 10.1 0.01 0.1 0.001 0.6 0.
PAGE 4
S1A – S1M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.
PAGE 5
S1A – S1M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: S2102
PAGE 6
S1A – S1M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.