Datasheet

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S1DAL – S1MAL

Taiwan Semiconductor

1 Version: B2103

1A, 200V - 1000V Standard Surface Mount Rectifier

FEATURES

● Glass passivated chip junction

● Ideal for automated placement

● Low profile package

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● DC to DC converter

● Switching mode converters and inverters

● General purpose

MECHANICAL DATA

● Case: Thin SMA

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Pure tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Indicated by cathode band

● Weight: 0.029g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

200 - 1000

FSM

J MAX

150

°C

Package

Thin SMA

Configuration

Single die

Thin SMA

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

S1DAL

S1GAL

S1JAL

S1KAL

S1MAL

UNIT

Marking code on the device

S1DAL

S1GAL

S1JAL

S1KAL

S1MAL

Repetitive peak reverse voltage

RRM

200

400

600

800

1000

Reverse voltage, total rms value

R(RMS)

140

280

420

560

700

Forward current

Surge peak forward

current single half sine

wave superimposed on

rated load

t = 8.3ms

FSM

t = 1.0ms

100

Junction temperature

-55 to +150

°C

Storage temperature

STG

-55 to +150

°C

Summary of content (5 pages)

PAGE 1
S1DAL – S1MAL Taiwan Semiconductor 1A, 200V - 1000V Standard Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low profile package Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose PARAMETER VALUE UNIT IF 1 A VRRM 200 - 1000 V IFSM 30 A TJ MAX 150 °C Package Thin SMA
PAGE 2
S1DAL – S1MAL Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 29 °C/W Junction-to-ambient thermal resistance RӨJA 82 °C/W Junction-to-case thermal resistance RӨJC 30 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL IF = 0.5A, TJ = 25°C Forward voltage IF = 1A, TJ = 25°C (1) IF = 0.
PAGE 3
S1DAL – S1MAL Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 1.5 1 0.5 10 1 f=1.0MHz Vsig=50mVp-p 0 0.1 25 50 75 100 125 150 1 10 LEAD TEMPERATURE (°C) Fig.4 Typical Forward Characteristics TJ=150°C 10 TJ=125°C 0.1 TJ=25°C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 10 10 UF1DLW TJ=150°C 1 TJ=125°C TJ=125°C 0.
PAGE 4
S1DAL – S1MAL Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Thin SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code YW = Date Code F = Factory Code 4 Version: B2103
PAGE 5
S1DAL – S1MAL Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.