Datasheet

ManualsBrandsTaiwan Semiconductor ManualsActive ComponentsRectifier 1 mA SOD 123W Single Tape on Full reel

S1DLW – S1MLW

Taiwan Semiconductor

1 Version: D2109

1A, 200V - 1000V Standard Surface Mount Rectifier

FEATURES

● Ideal for automated placement

● Compact package size

● High surge current capability

● Low power loss, high efficiency

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● DC to DC converter

● Switching mode converters and inverters

● General purpose

MECHANICAL DATA

● Case: SOD-123W

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Indicated by cathode band

● Weight: 0.019g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

200 - 1000

FSM

J MAX

175

°C

Package

SOD-123W

Configuration

Single die

SOD-123W

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

S1DLW

S1GLW

S1JLW

S1KLW

S1MLW

UNIT

Marking code on the device

1DLW

1GLW

1JLW

1KLW

1MLW

Repetitive peak reverse voltage

RRM

200

400

600

800

1000

Reverse voltage, total rms value

R(RMS)

140

280

420

560

700

Forward current

Peak forward surge current,

8.3ms single half sine-wave

superimposed on rated load

FSM

Junction temperature

- 55 to +175

°C

Storage temperature

STG

- 55 to +175

°C

Summary of content (5 pages)

PAGE 1
S1DLW – S1MLW Taiwan Semiconductor 1A, 200V - 1000V Standard Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Compact package size High surge current capability Low power loss, high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 1 A VRRM 200 - 1000 V IFSM 30 A TJ MAX 175 °C Package SOD-123W Configuration Single die ● DC to DC converter
PAGE 2
S1DLW – S1MLW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 25 °C/W Junction-to-ambient thermal resistance RӨJA 80 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR IF = 1A, TJ = 25°C (2) Junction capacitance TJ = 25°C SYMBOL TYP MAX UNIT VF - 1.1 V - 1 µA - 50 µA 8 - pF IR TJ = 125°C 1MHz, VR = 4.0V CJ Notes: 1.
PAGE 3
S1DLW – S1MLW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) 1 0 10 1 f=1.0MHz Vsig=50mVp-p 0.1 25 55 85 115 145 175 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 UF1DLW 1 TJ=125°C TJ=125°C 1 0.1 TJ=25°C TJ=25°C 0.01 0.1 0.001 0.
PAGE 4
S1DLW – S1MLW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SOD-123W SUGGESTED PAD LAYOUT MARKING DIAGRAM 4 P/N = Marking Code YW = Date Code F = Factory Code Version: D2109
PAGE 5
S1DLW – S1MLW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.