Datasheet

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S1GM – S1JM

Taiwan Semiconductor

1 Version: I2103

1A, 400V - 600V Standard Surface Mount Rectifier

FEATURES

● Ideal for automated placement

● Low forward voltage drop

● Glass passivated chip junction

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● DC to DC converter

● Switching mode converters and inverters

● General purpose

MECHANICAL DATA

● Case: Micro SMA

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Indicated by cathode band

● Weight: 0.006g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

400 - 600

FSM

J MAX

175

°C

Package

Micro SMA

Configuration

Single die

Micro SMA

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

S1GM

S1JM

UNIT

Marking code on the device

Repetitive peak reverse voltage

RRM

400

600

Reverse voltage, total rms value

R(RMS)

280

420

Forward current

Surge peak forward current, 8.3ms single half

sine wave superimposed on rated load

FSM

Junction temperature

-55 to +175

°C

Storage temperature

STG

-55 to +175

°C

Summary of content (6 pages)

PAGE 1
S1GM – S1JM Taiwan Semiconductor 1A, 400V - 600V Standard Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Low forward voltage drop Glass passivated chip junction Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose PARAMETER VALUE UNIT IF 1 A VRRM 400 - 600 V IFSM 20 A TJ MAX 175 °C Package Micro SMA
PAGE 2
S1GM – S1JM Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 30 °C/W Junction-to-ambient thermal resistance RӨJA 110 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR IF = 1A, TJ = 25°C (2) Junction capacitance Reverse recovery time TJ = 25°C SYMBOL TYP MAX UNIT VF - 1.
PAGE 3
S1GM – S1JM Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10 CAPACITANCE (pF) 1 0 f=1.0MHz Vsig=50mVp-p 1 25 50 75 100 125 150 175 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 10 TJ=125°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 10 10 UF1DLW 1 TJ=125°C TJ=125°C 10.1 TJ=25°C TJ=25°C 0.01 0.1 0.001 0.6 0.7 0.8 0.9 0.3 0.4 0.
PAGE 4
S1GM – S1JM Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.
PAGE 5
S1GM – S1JM Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Micro SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N YW 5 = Marking Code = Data Code Version: I2103
PAGE 6
S1GM – S1JM Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.