Datasheet

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S3A – S3M

Taiwan Semiconductor

1 Version: O2301

3A, 50V - 1000V Surface Mount Rectifier

FEATURES

● Glass passivated chip junction

● Ideal for automated placement

● Low forward voltage drop

● High current capability

● High surge current capability

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● Lighting application

● Converter

MECHANICAL DATA

● Case: DO-214AB (SMC)

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Indicated by cathode band

● Weight: 0.210g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

50 - 1000

FSM

100

J MAX

150

°C

Package

DO-214AB (SMC)

Configuration

Single die

DO-214AB (SMC)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

S3A

S3B

S3D

S3G

S3J

S3K

S3M

UNIT

Marking code on the device

S3A

S3B

S3D

S3G

S3J

S3K

S3M

Repetitive peak reverse voltage

RRM

100

200

400

600

800

1000

Reverse voltage, total rms value

R(RMS)

140

280

420

560

700

Forward current

Surge peak forward

current single half

sine-wave superimposed

on rated load

t = 8.3ms

FSM

100

t = 1.0ms

230

Junction temperature

- 55 to +150

°C

Storage temperature

STG

- 55 to +150

°C

Summary of content (6 pages)

PAGE 1
S3A – S3M Taiwan Semiconductor 3A, 50V - 1000V Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low forward voltage drop High current capability High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free PARAMETER VALUE UNIT IF 3 A VRRM 50 - 1000 V IFSM 100 A TJ MAX 150 °C Package DO-214AB (SMC) Configuration Single die APPLICATIONS ● ● ● ● Switching mode powe
PAGE 2
S3A – S3M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 13 °C/W Junction-to-ambient thermal resistance RӨJA 47 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS Forward voltage (1) Reverse current @ rated VR IF = 3A, TJ = 25°C (2) TJ = 25°C SYMBOL TYP MAX UNIT VF - 1.15 V - 10 µA - 250 µA IR TJ = 125°C Junction capacitance 1MHz, VR = 4.
PAGE 3
S3A – S3M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 3 CAPACITANCE (pF) 2 1 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 10 1 TJ=25°C 20 30 40 50 60 70 80 90 100 10 10 UF1DLW 1 TJ=125°C TJ=25°C 10.1 0.01 0.1 0.001 0.6 0.
PAGE 4
S3A – S3M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.
PAGE 5
S3A – S3M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) 0.13 C A B C H 4 5 7.15 6.60 8.15 7.75 3.20 2.90 0.13 B C A B 6.25 5.55 A 4 5 2.65 1.95 H 2.45 1.90 0.31 0.15 1.60 0.75 6.80 0.20 0.05 C SEATING PLANE 2.00 DETAIL A, ROTATED -90° (SCALE 3:1) 3.60 SUGGESTED PAD LAYOUT CATHODE INDICATOR P/N GYWF NOTES: UNLESS OTHERWISE SPECIFIED 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 3.
PAGE 6
S3A – S3M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.