Datasheet

SMBJ SERIES
Taiwan Semiconductor
1 Version: R2104
600W, 5V - 170V Surface Mount Transient Voltage Suppressor
FEATURES
● Ideal for automated placement
● Glass passivated junction
● Excellent clamping capability
● Fast response time: Typically less than 1.0ps
● Typical I
R
less than 1μA above 10V
● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b)
● Moisture sensitivity level: level 1, per J-STD-020
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Protect sensitive circuit from damage by high voltage
transients
● Lighting, ESD transient voltage protection of IC, system
● Inductive switching load protection of IC, system
● Electrical Fast Transient Immunity protection of IC, system
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.090g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
V
WM
5 - 170
V
V
BR
(uni - directional)
6.4 - 231
V
V
BR
(bi - directional)
6.4 - 231
V
P
PK
600
W
T
J MAX
150
Package
DO-214AA (SMB)
Configuration
Single die
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Non-repetitive peak impulse power dissipation with
10/1000µs waveform
(1)
P
PK
600
W
Steady state power dissipation at T
A
= 25°C
P
D
3
W
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load for Uni-directional only
I
FSM
100
A
Forward Voltage @ I
F
= 50A for Uni-directional only
(2)
V
F
3.5 / 5.0
V
Junction temperature
T
J
- 55 to +150
°C
Storage temperature
T
STG
- 55 to +150
°C
Notes:
1. Non-repetitive current pulse per Fig.3 and derated above T
A
= 25°C per Fig.2
2. V
F
= 3.5V on SMBJ5.0 - SMBJ90 devices and V
F
= 5.0V on SMBJ100 - SMBJ170 devices
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170
2. Electrical characteristics apply in both directions