Datasheet

SMBJ SERIES
Taiwan Semiconductor
4 Version: R2104
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
Part number
Marking code
Breakdown voltage
V
BR
@I
T
(V)
(Note 1)
Test
current
I
T
(mA)
Working
stand-off
voltage
V
WM
(V)
Maximum
blocking
leakage
current
I
D
@V
WM
(µA)
Maximum
peak
impulse
current
I
PP
(A)
(Note 2)
Maximum
clamping
voltage
V
C
@I
PP
(V)
Min
Max
SMBJ170A
PR
189
209
1
170
1
2.2
275
Notes:
1. V
BR
measure after I
T
applied for 30ms, I
T
= square wave pulse or equivalent.
2. Surge current waveform per Fig.3 and derate per Fig.2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
4. For bidirectional use C or CA suffix for types SMBJ5.0 - SMBJ170
5. For bipolar types having V
WM
of 10V (SMBJ10C) and under, the I
D
limit is doubled.
ORDERING INFORMATION
ORDERING CODE
(1)
PACKAGE
PACKING
SMBJx
DO-214AA (SMB)
3,000 / Tape & Reel
Notes:
1. "x" defines voltage from 5V(SMBJ5.0) to 170V(SMBJ170A)