Datasheet

SS12 – SS115
Taiwan Semiconductor
4 Version: Q2102
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
Fig.5 Maximum Non-Repetitive Forward Surge Current
0
1
2
25 50 75 100 125 150
SS12 - SS14
SS15 - SS115
10
100
1000
0.1 1 10 100
f=1.0MHz
Vsig=50mVp-p
SS12-SS14
SS15-SS16
SS19-SS115
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
T
J
=25°C
T
J
=75°C
T
J
=125°C
SS12 - SS14
SS15 - SS115
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Pulse width 300μs
1% duty cycle
SS12 - SS14
SS15 - SS16
SS115
SS19 - SS110
0
10
20
30
40
50
1 10 100
8.3ms single half sine wave
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
T
J
=25°C
T
J
=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
REVERSE VOLTAGE (V)
LEAD TEMPERATURE (°C)
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT (A)