Datasheet

SS12L SS115L
Taiwan Semiconductor
2 Version: Q2103
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance
R
ӨJL
45
°C/W
Junction-to-ambient thermal resistance
R
ӨJA
100
°C/W
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage
(1)
SS12L
I
F
= 0.5A, T
J
= 25°C
V
F
-
0.385
V
SS13L
-
0.430
V
SS14L
-
0.510
V
SS15L
SS16L
-
0.580
V
SS19L
SS110L
-
0.700
V
SS115L
-
0.750
V
SS12L
I
F
= 1.0A, T
J
= 25°C
-
0.450
V
SS13L
-
0.500
V
SS14L
-
0.550
V
SS15L
SS16L
-
0.700
V
SS19L
SS110L
-
0.800
V
SS115L
-
0.900
V
Reverse current @ rated V
R
(2)
SS12L
SS13L
SS14L
SS15L
SS16L
T
J
= 25°C
I
R
-
400
µA
SS19L
SS110L
SS115L
-
50
µA
SS12L
T
J
= 100°C
-
8
mA
SS13L
SS14L
SS15L
SS16L
-
6
mA
SS19L
SS110L
SS115L
-
-
mA
SS12L
SS13L
SS14L
SS15L
SS16L
T
J
= 125°C
-
-
mA
SS19L
SS110L
SS115L
-
0.5
mA
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms