Datasheet

SS12 – SS115
Taiwan Semiconductor
2 Version: Q2102
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance
R
ӨJL
28
°C/W
Junction-to-ambient thermal resistance
R
ӨJA
88
°C/W
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage
(1)
SS12
SS13
SS14
I
F
= 1A, T
J
= 25°C
V
F
-
0.50
V
SS15
SS16
-
0.75
V
SS19
SS110
-
0.80
V
SS115
-
0.95
V
SS12
SS13
SS14
I
F
= 1A, T
J
= 100°C
-
0.40
V
SS15
SS16
-
0.65
V
SS19
SS110
-
0.70
V
SS115
-
0.85
V
Reverse current @ rated V
R
(2)
SS12
SS13
SS14
SS15
SS16
T
J
= 25°C
I
R
-
0.2
mA
SS19
SS110
SS115
-
0.1
mA
SS12
SS13
SS14
T
J
= 100°C
-
6
mA
SS15
SS16
-
5
mA
SS19
SS110
SS115
-
-
mA
SS12
SS13
SS14
T
J
= 125°C
-
-
mA
SS15
SS16
-
-
mA
SS19
SS110
SS115
-
2
mA
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms