Datasheet

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SS12L – SS115L

Taiwan Semiconductor

1 Version: Q2103

1A, 20V - 150V Schottky Barrier Surface Mount Rectifier

FEATURES

● Low power loss, high efficiency

● Ideal for automated placement

● Guard ring for overvoltage protection

● High surge current capability

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● DC to DC converters

MECHANICAL DATA

● Case: Sub SMA

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Indicated by cathode band

● Weight: 0.019g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

20 - 150

FSM

J MAX

125, 150

°C

Package

Sub SMA

Configuration

Single die

Sub SMA

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

12L

13L

14L

15L

16L

19L

110L

115L

UNIT

Marking code on the device

12L

13L

14L

15L

16L

19L

10L

A5L

Repetitive peak reverse voltage

RRM

100

150

Reverse voltage, total rms value

R(RMS)

105

Forward current

Peak forward surge current,

8.3ms single half sine-wave

superimposed on rated load

FSM

Critical rate of rise of off-state

voltage

dV/dt

10,000

V/μs

Junction temperature

- 55 to +125

- 55 to +150

°C

Storage temperature

STG

- 55 to +150

°C

Summary of content (7 pages)

PAGE 1
SS12L – SS115L Taiwan Semiconductor 1A, 20V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1 A VRRM 20 - 150 V IFSM 30 A TJ MAX 125, 150 °C APPLICATIONS Package Sub SMA Configuration Single
PAGE 2
SS12L – SS115L Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 45 °C/W Junction-to-ambient thermal resistance RӨJA 100 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) SYMBOL TYP MAX UNIT SS12L - 0.385 V SS13L - 0.430 V SS14L SS15L SS16L SS19L SS110L SS115L - 0.510 V - 0.580 V - 0.700 V - 0.750 V - 0.450 V - 0.500 V - 0.550 V - 0.
PAGE 3
SS12L – SS115L Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SS1xL Sub SMA 10,000 / Tape & Reel Notes: 1.
PAGE 4
SS12L – SS115L Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 CAPACITANCE (pF) SS15L - SS115L 1 100 10 SS12L - SS14L f=1.0MHz Vsig=50mVp-p 1 0 25 50 75 100 125 0.
PAGE 5
SS12L – SS115L Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.
PAGE 6
SS12L – SS115L Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Sub SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: Q2103
PAGE 7
SS12L – SS115L Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.