Datasheet

TSC966CW
Taiwan Semiconductor
1 Version: F1801
NPN Silicon Planar High Voltage Transistor
FEATURES
● High BV
CEO
, BV
CBO
● High current gain
● Compliant to RoHS Directive 2011/65/EU
and in accordance to WEEE 2002/96/EC
● Halogen-Free according to IEC 61249-2-21
APPLICATION
● Lighting
● Switch mode power supply
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
BV
CEO
400
V
BV
CBO
600
V
I
C
300
mA
V
CE(SAT)
I
C
=50mA, I
B
=5mA
0.5
V
SOT-223
Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
600
V
Collector-Emitter Voltage
V
CES
600
V
Collector-Emitter Voltage @ V
BE
=0V
V
CES
400
V
Emitter-Base Voltage
V
EBO
7
V
Collector Current
DC
I
C
0.3
A
Pulse
1
A
Power Total Dissipation @ T
A
=25ºC
P
DTOT
1
W
Maximum Operating Junction Temperature
T
J
+150
o
C
Storage Temperature Range
T
STG
-55 to +150
o
C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Ambient Thermal Resistance
R
ӨJA
91
o
C/W
Junction to Case Thermal Resistance
R
ӨJC
25
o
C/W