Datasheet

TSI10L200CW
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Halogen-free according to IEC 61249-2-21
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
V
RRM
V
dV/dt V/μs
I
F
= 5A
I
F
= 10A
I
F
= 5A
I
F
= 10A
T
J
= 25°C
μA
T
J
= 125°C
mA
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D1510007 Version: A15
Operating junction temperature range
Typical thermal resistance per diode
T
J
= 25°C
SYMBOL
Storage temperature range
Polarity: As marked
Trench Schottky barrier rectifier is designed for high frequency
switched mode power supplies such as adapters, lighting, and
DC/DC converters.
Weight: 1.6 g (approximately)
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Instantaneous reverse current per
diode at rated reverse voltage
I
FSM
A
V
TYPICAL APPLICATIONS
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
- 55 to +150
Case: I
2
PAK
per device
Taiwan Semiconductor
10A, 200V Trench Schottky Rectifier
FEATURES
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Maximum average forward
rectified current
A
I
2
PA
K
Instantaneous forward
voltage per diode (Note1)
PARAMETER
I
F(AV)
per diode
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
5
10
Maximum repetitive peak reverse voltage
T
J
= 125°C
Voltage rate of change (Rated V
R
)
5
- 55 to +150
100
10000
UNIT
V
F
I
R
50
5
-
-
0.80
0.72
0.92
0.84
0.86
0.78
0.98
0.90
MAX
TSI10L200CW
200
TYP