Datasheet

TSM100N06
60V N-Channel Power MOSFET
Document Number: DS_P0000019 1 Version: B15
TO
-
220
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
60 6.7 @ V
GS
=10V 100
Features
● Advanced Trench Technology
● Low R
DS(ON)
6.7mΩ (Max.)
● Low gate charge typical @ 81nC (Typ.)
● Low Crss typical @ 339pF (Typ.)
Block Diagram
N-Channel MOSFET
Ordering Information
Part No. Package Packing
TSM100N06CZ C0G TO-220 50pcs / Tube
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current
T
C
=25°C
I
D
100
(3)
A
T
C
=70°C 80
T
A
=25°C 14
T
A
=70°C 11
Drain Current-Pulsed Note 1 I
DM
400 A
Avalanche Current, L=0.1mH I
AS
71 A
Avalanche Energy, L=0.1mH E
AS
, E
AR
400 mJ
Maximum Power Dissipation
T
C
=25°C
P
D
167
W
T
C
=70°C 107
T
A
=25°C 2
T
A
=70°C 1.3
Storage Temperature Range T
STG
-55 to +150 °C
Operating Junction Temperature Range T
J
-55 to +150 °C
* Limited by maximum junction temperature
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨ
JC
0.8 °C/W
Thermal Resistance - Junction to Ambient RӨ
JA
62.5 °C/W
Notes: Surface mounted on FR4 board t ≤ 10sec
Pin
Definition
:
1. Gate
2. Drain
3. Source