Datasheet

TSM1N80
Taiwan Semiconductor
Document Number: DS_P0000037 1 Version: B15
N-Channel Power MOSFET
800V, 0.3A, 21.6Ω
FEATURES
● Advanced planar process
● 100% avalanche tested
● Fast switching
APPLICATION
● Power Supply
● Lighting
KEY PERFORMANCE PA
RAMETERS
PARAMETER VALUE UNIT
V
DS
800 V
R
DS(on)
(max) 21.6 Ω
Q
g
5 nC
SOT
-
223
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE
M
AXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
800 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current I
D
0.3 A
Pulsed Drain Current
(Note 1)
I
DM
1 A
Single Pulse Avalanche Energy
(Note 2)
E
AS
90 mJ
Avalanche Current, Repetitive or Not-Repetitive
(Note 1)
I
AR
1 A
Total Power Dissipation @ T
C
= 25°C P
DTOT
2.1 W
Operating Junction Temperature
T
J
150
°C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction to Ambient Thermal Resistance R
ӨJA
60 °C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air